| PART |
Description |
Maker |
| DR65-00011 DR65-001TR |
Quad Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| MADR-009443-000100 MADR-009443-0001TR MADR-009443- |
Quad Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| DR65-0109 DR65-0109TR |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| DR65-0109TR |
Single Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
| 19241-00 19300-00 19341-00 19301 19200-00 19202 19 |
Single Driver for GaAs FET Switches and Attenuators
|
Clare, Inc.
|
| MADRCC0005TR MADRCC0005 |
Single Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| IS9-1715ARH/PROTO 5962F0052101VXC 5962F0052101QXC |
Complementary Switch FET Driver, Rad-Hard
Radiation Hardened Complementary Switch FET Driver 3 A BUF OR INV BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
